Description
Specification
Feature:
- Dynamic Write Acceleration
- Redundant Array of Independent NAND (RAIN)
- Multistep Data Integrity Algorithms
- Adaptive Thermal Protection
- Integrated Power Loss Immunity
- Active Garbage Collection
- TRIM Support
- NVMe standard Self-Monitoring and Reporting Technology (SMART)
- Error Correction Code (ECC)
- NVMe Autonomous Power State Transition (APST) Support
- Mfr Part Number: CT2000P5SSD8
- Capacity: 2 TB
- Form Factor: M.2 2280
- Interface: N/A
- NAND Flash: 3D NAND
- Performance:
- Sequential Read Rate: 3400 MB/s
- Sequential Write Rate: 3000 MB/s
- Endurance: 1200 TBW
- MTTF: 2,000,000 hours
- Operating Temperature: 0 °C to 70 °C
- Certifications: CE, FCC, VCCI, KC, RCM, ICES, Morocco, BSMI, Ukraine, UL, TUV, China RoHS, WEEE, Halogen Free
- Dimensions (WxDxH): N/A
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